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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 600 V 600 V
ID25 15 A 20 A
RDS(on) 0.50 W 0.35 W
trr 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C 15N60 20N60 15N60 20N60 15N60 20N60
Maximum Ratings 600 600 20 30 15 20 60 80 15 20 30 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ V/ns W C C C C
TO-247 AD (IXFH)
(TAB)
TO-204 AE (IXFM)
D G = Gate, S = Source,
G
D = Drain, TAB = Drain
1.6 mm (0.062 in.) from case for 10 s Mounting torque
300
1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g
Features * International standard packages * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance - easy to drive and to protect * Fast intrinsic Rectifier Applications * DC-DC converters * Synchronous rectification * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC motor control * Temperature and lighting controls * Low voltage relays Advantages * Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) * Space savings * High power density
91526E (4/99)
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.0 4.5 100 TJ = 25C TJ = 125C 250 1 0.50 0.35 V V nA mA mA W W
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25
15N60 20N60 Pulse test, t 300 ms, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
(c) 2000 IXYS All rights reserved
1-4
IXFH 15N60 IXFM 15N60
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 11 18 4500 VGS = 0 V, VDS = 25 V, f = 1 MHz 420 140 20 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2 W (External) 43 70 40 151 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 29 60 40 60 90 60 170 40 85 0.42 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
IXFH 20N60 IXFM 20N60
TO-247 AD (IXFH) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 * ID25, pulse test
Dim. Millimeter Min. Max. A B C D E F G H 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8
Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM IF = IS -di/dt = 100 A/ms, VR = 100 V Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 15N60 20N60 15N60 20N60 15 20 60 80 1.5 250 400 1 2 10 15 A A A A V ns ns mC mC A A
J K L M N
1.5 2.49
TO-204 AE (IXFM) Outline
IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C
Dim. A B C D E F G H J K Q R
Millimeter Min. Max. 38.61 39.12 - 22.22 6.40 11.40 1.45 1.60 1.52 3.43 30.15 BSC 10.67 11.17 5.21 5.71 16.64 17.14 11.18 12.19 3.84 4.19 25.16 26.66
Inches Min. Max. 1.520 1.540 - 0.875 0.252 0.449 0.057 0.063 0.060 0.135 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.050
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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IXFH 15N60 IXFM 15N60
Fig. 1 Output Characteristics
TJ = 25C VGS = 10V
IXFH 20N60 IXFM 20N60
Fig. 2 Input Admittance
40
40
6V
30
ID - Amperes
ID - Amperes
30
TJ = 25C
20
20
5V
10
10
0
0 0 5 10 15 20 0 1 2 3 4 5 6 7 8 9 10
VDS - Volts
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
1.40 1.35 1.30 1.25 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0 5 10 15 20 25 30 35 40
VGS = 15V VGS = 10V TJ = 25C
Fig. 4 Temperature Dependence of Drain to Source Resistance
2.50 2.25
RDS(on) - Normalized
RDS(on) - Normalized
2.00 1.75 1.50 1.25 1.00 0.75 0.50 -50 -25 0 25 50 75 100 125 150
ID = 10A
ID - Amperes
TJ - Degrees C
Fig. 5 Drain Current vs. Case Temperature
35 30
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
1.2
VGS(th)
1.1
BVDSS
BV/VG(th) - Normalized
25 50 75 100 125 150
25
ID - Amperes
1.0 0.9 0.8 0.7 0.6
20 15 10 5 0 -50
20N60
15N60
-25
0
0.5 -50
-25
0
25
50
75
100 125 150
TC - Degrees C
TJ - Degrees C
(c) 2000 IXYS All rights reserved
3-4
IXFH 15N60 IXFM 15N60
Fig.7 Gate Charge Characteristic Curve
10 9 8 7
VDS = 300V ID = 20A IG = 10mA
IXFH 20N60 IXFM 20N60
Fig.8 Forward Bias Safe Operating Area
100
10s
Limited by RDS(on)
100s 1ms
6 5 4 3 2 1 0 0 20 40 60 80 100 120 140
ID - Amperes
VGE - Volts
10
10ms
1
100ms
0.1 1 10 100
600
Gate Charge - nCoulombs
VDS - Volts
Fig.9 Capacitance Curves
4500 4000
Ciss
Fig.10 Source Current vs. Source to Drain Voltage
80 70 60
Capacitance - pF
3500
ID - Amperes
3000 2500 2000 1500 1000 500 0 0 5
f = 1 MHz VDS = 25V
50 40 30
TJ = 25C TJ = 125C
20
Coss Crss
10
10
15
20
25
0 0.00
0.25
0.50
0.75
1.00
1.25
1.50
VCE - Volts
VSD - Volts
Fig.10 Transient Thermal Impedance
1
Thermal Response - K/W
D=0.5
0.1
D=0.2 D=0.1 D=0.05
0.01 D=0.02
D=0.01 Single Pulse
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2000 IXYS All rights reserved
4-4

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